An X-band main-line type loaded line RF MEMS phase shifter fabricated using printed circuit based MEMS technology is reported. The phase shifter provides a phase shift of 31.6° with a minimum insertion loss of 0.56 dB at 9 GHz for an applied DC bias voltage of 40 V. These phase shifters are suitable for monolithic integration with low-cost phased arrays on Teflon or Polyimide such as low dielectric constant substrates.
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Ramadoss et al. (2005) studied this question.
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