Hydrogenated Amorphous Silicon Carbide Photoreceptor for Photoaddressed Spatial Light Modulator

A highly photosensitive hydrogenated amorphous silicon carbide (a-Si1-xCx:H) photoreceptor with a PIN diode configuration has been prepared by means of a plasma CVD method using SiH4and C2H2highly diluted with He. He-diluted plasma is effective in restraining the generation of CH2, CH3and Si-CH3configurations in the a-Si1-xCx:H film and markedly improves photoconductivity of the film. Using this photoreceptor, a photoaddressed spatial light modulator (PASLM) which operates in a transmission mode, has been fabricated with a ferroelectric liquid crystal. The PASLM exhibits a high resolution of 180 line pairs/mm, a response time of ∼50 µs and a contrast ratio of ∼30:1 under a write light (λ=565 nm) of 1.5 mW/cm2intensity.