The kinetics of rutile thin film deposition on silicon from the reaction has been studied over a range of temperature (673°–1320°K), titanium tetrachloride partial pressure , and oxygen partial présure in a horizontal flow system with a rf‐heated susceptor. Between 673° and 1120°K the reaction has been found to proceed by a Rideal‐Eley mechanism with the surface reaction rate constant following the relationship exp , over a range of partial pressures and flow rates. Homogeneous reaction becomes appreciable above 1120°K.
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R. N. Ghoshtagore (1970) studied this question.