A two-dimensional device simulator which allows the complete transient simulation of nonvolatile memories is presented. The simulator has been derived from HFIELDS and incorporates models to account for Fowler-Nordheim tunneling, hot electron injection through silicon dioxide, and band-to-band tunneling in silicon. The physical models have been verified by comparing simulations with measurements performed on suitable test structures where good agreement has been obtained. The tool has been used to investigate flash EEPROM device scaling and to evaluate a published scaling scenario.>
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Keeney et al. (1992) studied this question.
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