The internal photoemission and flatband voltage monitored trap-photodepopulation technique has been used to investigate the first order kinetics of trap emptying in the low pressure chemically vapor-deposited thin film of Si3N4 of an Al-Si3N4-SiO2-Si capacitor structure. An effective photoionization cross section associated with a 3.0-eV deep electron trapping center in the bandgap of the Si3N4 film was determined to be 0.3–1.7×10−19cm2 over the photon energy range 2.0–3.4 eV.
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Bibyk et al. (1981) studied this question.
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