Polarization‐independent reconfigurable frequency selective rasorber/absorber with low‐insertion loss

A polarization‐independent reconfigurable frequency selective rasorber (FSR)/absorber with low‐insertion loss (IL) based on diodes is proposed in this article. The presented structure consists of a lossy layer based on square loops and a bandpass frequency‐selective surface. These two layers are separated by an air layer. Each layer has an embedded bias network that provides the bias voltage to the diodes through metallic via. This configuration can avoid undesirable effects associated with the additional biasing wire. When the diodes are in off‐state, the structure is in FSR mode and exhibits a transmission window at 4.28 GHz with only 0.69 dB IL within the absorption bands. While diodes are in on‐state and the structure switches to absorber mode, it achieves perfect absorption with absorptivity of over 90% ranging from 2.8 to 5.2 GHz. An equivalent circuit model is developed to analyze the physical mechanism of the structure. A prototype of the proposed architecture is fabricated and measured, where reasonable agreements between simulations and measurements are observed, verifying the effectiveness of this design.