This paper describes a technique that permits measurements of generation lifetime in the range of ≳ 1 msec to ≪ 0.1 nsec. For the measurements, a metal oxide semiconductor (MOS) capacitor is biased into strong inversion and subsequently switched into deep depletion. An appropriate experimental setup prints out or displays a typical recovery time, which is introduced into a computer fed by the theoretical generation model and the wafer data. The technique is suitable for process characterization.
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Fahrner et al. (1976) studied this question.