Photoconductivity measurements between 1.2 and 5 μ have been used to study the annealing characteristics of defects in p-type silicon following neutron irradiation at 82°K. In particular, the 3.9 μ photoconductivity peak previously associated with the presence of divacancies in irradiated silicon has been investigated. The magnitude of the 3.9 μ peak is found to be small after neutron irradiation at 82°K, but it increases markedly during subsequent annealing between 175 and 375°K. The annealing growth of the 3.9 μ (divacancy) peak between 275 and 375°K is similar to vacancy-oxygen center growth previously observed following neutron irradiation ∼225°K. The divacancy growth is attributed to vacancy liberation from neutron produced defect clusters in accord with the previous interpretation of vacancy-oxygen center growth. The annealing lots of the 3.9 μ peak between 375 and 550°K is correlated with the annealing of divancies as measured by optical absorption after room-temperature neutron irradiation.
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H. J. Stein (1969) studied this question.
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