The first absorption band for an irradiation-induced defect in SiGe alloys has been observed at 2.15-μm (90 K) in Si0.5Ge0.5 following neutron or proton bombardment. The 2.15-μm band is similar in width and thermal stability to the 1.7-μm divacancy band in Si, but the band position is closer to a 2.4-μm band tentatively ascribed to divacancies in Ge. A distinct divacancylike band in the bombarded SiGe suggests either some structural order in the alloy or structural selectivity in defect formation. Absence of characteristic Si or Ge bands implies that the alloy is free from any significant amount of Si or Ge aggregates.
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H. J. Stein (1973) studied this question.
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