Error-Free Operation of an All-Silicon Waveguide Photodiode at 1.9 μ m

Error-free detection at 1 Gb/s is experimentally demonstrated with an all-Si ion-implanted p-i-n waveguide photodetector operating at 1.9 μm, and the receiver sensitivity is measured. The responsivity of the device is compared between operation at 1.9 and 1.55 μm, and a 5 dB drop in responsivity is observed. Simulations show that nearly 25% of this drop is due to the lower confinement of the 1.9 μm wavelength. Theoretical analysis of the waveguide structure optimized for operation at 1.9 μm shows that data rates of 10 Gb/s are possible with a loss in sensitivity of only 3 dB compared with operation at 1.55 μm.