A high speed 0.6- mu m 16 K CMOS gate array on a thin SIMOX film

0.6- mu m CMOS technologies were developed on thin SIMOX film and applied to a 16 K gate CMOS gate array. High-speed operation with low power consumption characteristics was verified with ring oscillators on the thin SOI CMOS gate array with V/sub D/=3 V, compared with bulk-Si ring oscillators with the same dimension. Parasitic capacitances in thin SOI and bulk-Si circuits were estimated to clarify the origin of the speed gain from the propagation delay times of the ring oscillators with various kinds of controlled load capacitances. Full functional operation was achieved for a 16 b*16 b multiplier on the SOI CMOS gate array with 1.4 times higher speed operation and 0.8 times lower power consumption than the multiplier on a bulk-Si substrate.>