The stability of a metastable state produced by laser irradiation on arsenic-diffused Si is studied by measurement of the sheet resistance as a function of postlaser heat treatment between 300 and 900 °C. The good conductivity produced by laser irradiation decays at as low as 400 °C within 1 h. This preempts the advantage of good conductivity produced by transient annealing and sets a severe restriction on the application of transient processing.
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Wei-Kan Chu (1980) studied this question.
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