Lateral diffusion of sources during selective growth of Si-doped GaAs layers by metalorganic vapor phase epitaxy

Lateral diffusion of sources during selective growth of Si-doped GaAs layers by metalorganic vapor phase epitaxy was analyzed. The diffusion lengths of gallium and silicon species were estimated from carrier concentration profiles measured by Raman spectroscopy and thickness profiles. Using the diffusion lengths obtained, it is speculated that the diffusion materials are monomethylgallium and silylarsine. From their identical diffusion lengths, it was determined that there is no difference in diffusion materials between arsine and tertiarybutylarsine.