We have investigated the valence band offset (ΔE VBO ) of the molecular beam epitaxially grown heterostructure HgTe/CdTe(001) by k-resolved ultraviolet (UPS) and X-ray (XPS) photoemission. Our angle-dependent UPS measurements at two different photon energies demonstrate that the dispersion of the valence band (VB) must be checked carefully in order to find the true position of the VB maximum in the Brillouin zone. With this information the valence band discontinuity was determined as (0.53 ± 0.03) eV, which is different from previously found photoemission values but now agrees well with magneto-optical investigations. In addition, we have determined the energy gap of CdTe(001) and HgTe(001) by a combination of UV and inverse photoemission. The energy gap of CdTe is determined to (1.57 ± 0.06) eV and that for HgTe as (0.0 ± 0.06) eV. We therefore conclude that HgTe is a semi-metal with inverted band structure in agreement with other results.
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Eich et al. (1999) studied this question.
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