Reduction in dislocation density in In-doped GaP LPE layers grown from indium solvent

A reduction in dislocation density, typically by a factor of 3–8, was observed across the interface between LEC GaP (111)B substrate and an n-type In-doped GaP layer grown from indium solvent by liquid-phase epitaxy. Doping of the epitaxial layer with indium contributed to the reduction in dislocation density in the epitaxial layer.