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November 15, 2000Journal of Applied PhysicsOpen Access

Etching of SiO2 and Si in fluorocarbon plasmas: A detailed surface model accounting for etching and deposition

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ΕGΕvangelos GogolidesNational Centre of Scientific Research "Demokritos"PVP. Vauvert GKGeorge KokkorisNational Technical University of Athens

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Gogolides et al. (2000) studied this question.

synapsesocial.com/papers/6a8bedee29efb9ec64c45d53 https://doi.org/10.1063/1.1311808

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