All thin film, insulated gate, field effect transistors (triodes) have been formed by standard vacuum deposition techniques. Comparison of the electrical parameters of devices formed with , , or semiconductor layers indicated certain advantages, namely, higher mobility and better stability, of the units. Stability and life of devices was improved by use of aluminum rather than gold for the gate electrode. A preliminary investigation of the use of various materials for use as the dielectric layer indicates many compounds are suitable.
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Wilson et al. (1965) studied this question.