Microwave impedance measurements on resonant tunnelling diodes and network model parameter extraction

Determination of the microwave impedance and network model parameter extraction of double barrier resonant tunnelling diodes (DBRTDs) are described. Two methods were used to measure the device impedance in the frequency range 0.1–18 GHz. Packaged DBRTDs were measured in a conventional coaxial fixture, and a novel mount was developed for unpackaged DBRTD chips. The network model gives a good description of the device impedance. The device capacitance and differential conductance are shown to be bias-voltage dependent. Measurement and simulation results are presented.