Advances in Te/Se‐Based 2D p‐Type Semiconductors for Electronics and Optoelectronics

Tellurium (Te) and selenium (Se), as Group VI semiconductors characterized by their unique one‐dimensional (1D) helical chains forming 2D van der Waals (vdW) layers, have emerged as an important material choice for next‐generation electronics and optoelectronics due to their high hole mobility, tunable bandgap and excellent environmental stability. This article provides a comprehensive review of the latest research progress in Te, Se, Se x Te 1‐ x alloys and their oxides. First, we overview the significant physical structure anisotropy and diverse electronic properties—including bandgap coverage from mid‐wave infrared (MWIR) to visible light—that arise from their distinctive crystal structures. Second, various synthesis strategies are compared in detail, including chemical vapor deposition (CVD), physical vapor deposition (PVD), molecular beam epitaxy (MBE), and solution‐phase methods, with a particular focus on recent breakthroughs in wafer‐scale uniform growth and bandgap engineering. At the application level, the review highlights high‐performance Te/Se‐based p‐type field‐effect transistors (FETs), large‐scale complementary metal oxide semiconductor (CMOS) logic circuits (e.g., inverters, NAND gates, and full adders), and high‐sensitivity infrared to visible optoelectronics. Finally, current challenges in high‐performance single‐crystal preparation and industrial integration are summarized, alongside an outlook on the application prospects of these novel low‐dimensional materials in flexible electronics and neuromorphic computing.