Compositionally Dependent Si 2 p Binding Energy Shifts in Silicon Oxynitride Thin Films

The Si 2 p binding energies measured from a series of silicon oxynitride thin films are related to the nitrogen contents of the films using a simple Pauling charge distribution model. The linear relation found between the binding energy and the calculated charge is expected if Si–N bonds replace Si–O bonds as the nitrogen content of the films is increased.