Auger electron and x-ray photoelectron spectroscopy analysis of the hydrogenated amorphous silicon-tin oxide interface: Evidence of a plasma-induced reaction

Auger electron and x-ray photoelectron spectroscopies have been used to examine the chemistry of the hydrogenated amorphous silicon-tin oxide interface. Elemental tin is found in excess at the interface. Silicon dioxide resulting from a plasma-induced reduction of the tin dioxide surface is found throughout the thin silicon layer and peaks at the hydrogenated amorphous silicon-tin oxide interface.