It is shown that two-step oxidation experiments give evidence of the stress dependence of the oxidation diffusivity during dry thermal oxidation of silicon. It is demonstrated that the stress state model of oxidation is also adequate for the analysis of two-step oxidations. In particular, it gives a reasonably good description of the second oxidation kinetics and of the behavior of the activation energy of the oxygen diffusivity with the temperature of the second oxidation and the relaxation state.
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G. Ghibaudo (1987) studied this question.
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