Growth kinetics of thin silicon dioxide in a controlled ambient oxidation system

The growth kinetics of thin silicon oxide films less than 300 Å are studied by using a stainless steel controlled ambient oxidation system. The oxidation system features resistive heating of silicon and high vacuum capability of 10−8 Torr. It is shown that the data, obtained in the oxygen pressure range of 0.01–0.5 atmosphere and in the temperature range of 930–1030 °C, can be approximated by parabolic growth law, with an activation energy of 1.34 eV. Electrical characteristics pertinent to metal-oxide-semiconductor devices are also described.