Influence of the interface layer on the strain relaxation of ZnSe epitaxial layers grown by MBE on (001)GaAs, C Giannini, E Carlino, P Sciacovelli, L Tapfer, M Sauvage-Simkin, Y Garreau, N Jedrecy, M B Véron, R Pinchaux
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Giannini et al. (1999) studied this question.
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