H/sub 2//O/sub 2/ plasma on polysilicon thin-film transistor

It is reported for that H/sub 2/ plasma followed by O/sub 2/ plasma is more effective for passivating grain boundary states in polysilicon thin film. Polysilicon thin-film transistors (TFTs) made after H/sub 2//O/sub 2/ plasma treatment can exhibit a turn-on threshold voltage of -0.1 V, a subthreshold swing of 0.154 V/decade, an ON/OFF current ratio I/sub on//I/sub off/ over 1*10/sup 8/, and an electron mobility of 40.2 cm/sup 2//V-s.>