Reversal of forward voltage drift in 4H-SiC p-i-n diodes via low temperature annealing

Recent reports have shown that Shockley stacking fault (SSF) growth in 4H-SiC may be reversed via low temperature (210–600°C) annealing. It is not clear if the associated drift in the forward voltage drop (Vf) is also reversed. Here we show that annealing of SSFs causes the complete and repeatable recovery of Vf. Furthermore, by looking at the time-dependent recovery of Vf during both the current stressing and thermal annealing of a single diode, we ascertain that the mechanisms for these two processes are different.