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Highly ordered anodic porous alumina was used as a mask for a reactive beam etching (RBE) to transform the nanochannel pattern into III-V semiconductors. The alumina mask showed high tolerance to RBE using a Br2/N2 mixed gas system. GaAs and InP nanohole arrays with a high aspect ratio and with diameter uniformity of 2%, which was as good as that of the alumina mask, were obtained.
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Nakao et al. (1999) studied this question.
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