Concentration and Magnetic-Field Dependence of Spin-Flip Magneto-Raman Scattering

A population-limited intensity of the spin-flip line in Stokes scattering from n-type semiconductors is calculated on the basis of virtual hole-electron transitions between valence and conduction bands. For donor concentrations N such that the Fermi energy EF is less than the spin-flip energy ωₛ, the intensity is proportional to N and independent of the magnetic field H. For ωₛ<EF<eHm*c (= cyclotron energy), the intensity is proportional to H³N^-1. Its behavior with increasing EF is predicted to be quasiperiodic, with a period ωc. The radiation-frequency dependence is described by a Wolff-type enhancement factor.