The thermal evolution of a ZnSe epilayer grown by molecular beam epitaxy on GaAs(001) has been studied by high resolution x-ray diffraction as well as photoelectron and Raman spectroscopies. Sequential annealing of a relaxed epilayer reveals a fast migration of Ga towards the ZnSe cap layer with a significant accumulation of As atoms near the ZnSe-reacted interface. A Ga2Se3 compound appears as a predominant byproduct whereas Zn atoms are probably diffusing from the reacted interface into the GaAs substrate.
No takes yet. Share an insight, caveat, or question.
Mosca et al. (2002) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: