The energy of the exciton—exciton interaction is calculated as a function of the distance between their centres of mass for the atomic model of a semiconductor. Computed numerical results are presented for various values of the parameters of the atomic functions, relative‐motion functions, and the electron‐hole‐effective mass ratio. The binding energy of two excitions is obtained by the Green's function method assuming that the exciton‐exciton interaction is less than the interaction of the excitons with optical and acoustic phonons. The role of the direct exciton‐exciton interaction and the indirect interaction, via optical or acoustic phonons, in the formation of a biexciton is studied. The results are given of calculations of the cross‐section for elastic scattering between two excitons using the Born approximation.
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A. I. Bobrysheva (1966) studied this question.
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