Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
March 1, 1989Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

Growth condition studies of pseudomorphic InGaAs/GaAs strained layer structures and InGaAs/AlGaAs high electron mobility transistor layer properties

View Full Paper
Ask AI
Bookmark
Share

Authors

SWShang-Lin WengJones InstituteCWChris WebbCurtin UniversityJEJ. N. EcksteinUniversity of Illinois Urbana-Champaign

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Weng et al. (1989) studied this question.

synapsesocial.com/papers/6a8c210ff71b672e3df4b7d0https://doi.org/10.1116/1.584751
View Full Paper
Ask AI
Bookmark
Share