Rare earth doped silicon nanocrystals derived from an erbium amidinate precursor

We describe the use of Er(tBuNC(CH 3 )NtBu) 3 as a dopant source in the preparation of silicon nanocrystals, particularly as regards their observed structure, composition, and photophysical properties. These nanocrystals were prepared by the co-pyrolysis of Er(tBuNC(CH 3 )NtBu) 3 and disilane in a dilute helium stream at 1000 °C. Characterization methods include high resolution electron microscopy, selected area electron diffraction, energy dispersive x-ray measurements, extended x-ray absorption spectroscopy, and photoluminescence spectroscopy. In conditions identical to those used previously for β-diketonate precursors, nanocrystals doped using this amidinate source are larger in size, of a narrower size distribution, and contain more erbium in the nanocrystal on average. Steady state photoluminescence measurements as a function of excitation wavelength confirm that the characteristic 1540 nm emission detected in these nanocrystals emit by a silicon exciton-mediated pathway. These results are a clear example of precursor dopant chemistry exerting a significant effect on resultant nanoparticle properties.