AlxIn1−xP epilayers grown by organometallic vapor phase epitaxy are characterized by electroreflectance, photoluminescence, and Raman spectroscopy. Electroreflectance measurements of the E0 band gap show significant bowing of the direct band gap with composition. The compositional dependence of the direct gap is found to be EΓ(x)=1.35+1.83x+0.38x2 (eV). In the Raman scattering spectrum, the AlP-like longitudinal optical phonon mode is identified and its energy is measured as a function of composition.
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Bour et al. (1987) studied this question.
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