The effect of proximity-cap rapid thermal annealing on the surface morphology of (100) InP epitaxial layers grown on GaAs substrates is studied by atomic force microscopy. Only small roughening was found beside the macroscopic thermal etch pits up to annealing at 940 °C for 10 s. Artifacts in the image formation are identified.
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Riesz et al. (1998) studied this question.
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