The results of using picosecond holographic interferometry in traditional excite‐and‐probe technique for the study of light pulse absorption in semiconductors are presented. The method allows to record the two‐dimensional distribution of transient light‐induced refractive index in a volume of the semiconductors which corresponds to the known time‐delay between exciting and probing pulses. The distribution obtained is compared with calculations based on Drude's relation and the solution of the system of equations describes the process of single (Si)‐ or two‐photon (GaAs) light pulse absorption. As a result it is possible to determine either some nonlinear parameters of semiconductor or parameters of the exciting pulse.
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Бугаев et al. (1988) studied this question.
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