The surface conductance of the Si(100)-(2×1) surface was measured as a function of temperature on a fully depleted Si(100)/SiO₂/Si substrate. The surface-state conductance is surprisingly large and reveals a clear signature of the c(4×2)→2×1 order-disorder phase transition of buckled Si dimers on Si(100). Surface scattering increases with decreasing c(4×2) order on the surface.
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Yoo et al. (2001) studied this question.
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