Epitaxy of Al deposited by sputtering on Si(001) substrates was investigated in detail by transmission electron microscopy studies. Heat treatment during or after deposition and growth to greater thickness enlarged the Al grains in the film and made the epitaxial relationship more distinct. It is confirmed that the Al epitaxy formed by the sputtering method is as perfect as that by other techniques.
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Niwa et al. (1991) studied this question.
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