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In a low-pressure electron-cyclotron-resonance (ECR) plasma sputtering system with mirror confinement, variation of the plasma property by an RF power supply to the sputtering target has been studied. Without RF power supply, the electron temperature and the plasma density reached a maximum value around the center of the plasma column and around the ECR zone, respectively. These values became higher with increasing microwave power. With the introduction of RF power to the target material of SrTiO3 (STO), the ion flux and emission intensity of spectral lines in Ar gas were found to be negligibly varied. The ion and sputtered particle flux were found to be controlled by microwave power and RF power, respectively. A high film deposition rate was obtained, reaching a value of about 8.5 nm/min at a low gas pressure of 2.7×10-2 Pa.
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Baba et al. (2000) studied this question.
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