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A method has been developed for delineating arsenic implanted n + p junctions in silicon by selective etching in 0.5% HF in HNO 3 and examination by transmission electron microscopy. This method is particularly applicable to shallow junction (≲ 0.1 μm) devices where conventional methods are no longer applicable. The n + region is selectively etched, and delineation occurs at a depth corresponding to a concentration of 1 × 10 19 As / cm 3 .
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Sheng et al. (1981) studied this question.
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