In this paper we obtain the density of states for electrons bound to Na⁺ impurities at the semiconductor-insulator interface of a metal-oxide-semiconductor structure, when an inversion layer is established by an external electric field. Impurity bands are calculated for several values of the screening length, the distance from the impurities to the inversion layer, and the impurity concentration. Results for the bandwidths and the peak values of the density of states are compared with experimental data.
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Lima et al. (1985) studied this question.
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