Dry, rapid etching of GaAs has been accomplished using an excimer laser (ArF, 193 nm) with HBr etching gas by photochemical initiation. Spatially uniform etch rates of up to 8 μm/min have been achieved on large-area, masked substrates. Selective crystallographic etching is observed and controlled in the process.
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Brewer et al. (1985) studied this question.
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