High quality aluminum films are deposited using a two-step process. KrF-laser mask patterned palladium catalyst areas are selectively covered with aluminum using triethylamine alane as precursor. The precursor is supplied directly in the liquid phase, so this technique can also work under atmospheric pressure conditions in an inert gas atmosphere. One micrometer thick aluminum metal films can be generated spatially selective with high deposition rate (t≲10 s).
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Lehmann et al. (1992) studied this question.