Interfacial Properties of Hf-silicate∕Si and Hf-silicate∕Al[sub 2]O[sub 3]∕Si Deposited by Atomic Layer Chemical Vapor Deposition

Ultrathin and , grown on Si surfaces by atomic layer chemical vapor deposition, were characterized in terms of their interface properties using X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy. The formation of Hf-silicide at interfaces was induced by the reaction of metallic Hf atoms with Si substrate atoms; this formation was suppressed by the presence of interlayers between and Si. As the interlayer thickness increased, the Hf XPS peak intensity from Hf-silicide decreased and completely disappeared for thickness greater than 10 nm. Effects of interlayers on the atomic structure of the films were also discussed.