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A new deposition technique for molybdenum silicide films is presented whereby the films are deposited by magnetron‐d‐c‐reactive sputtering using a Mo target in a silane argon atmosphere. The influence of sputtering conditions upon the film properties was investigated by utilizing mass spectroscopy, Auger electron spectroscopy, and x‐ray diffractometry. Films with various Si/Mo atomic ratios up to 1.9 were obtained by controlling the sputtering power and the silane partial pressure. The crystal structures were found to be continuously transformed from Mo‐rich silicides to Si‐rich ones, including , , and , with increasing Si/Mo atomic ratio.
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Yanagisawa et al. (1980) studied this question.
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