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A tight-binding type electronic theory (molecular approximation) is used to calculate the formation energy of the double kink E d k for a 1/2[110](111) (perfect glide set) screw dislocation in covalent semiconductor Si. Effects of external shear stress on the double kink nucleation process are investigated in detail. It is shown that the calculated stress dependence of the E d k is in good agreement with the experimental results of the activation energy for the screw dislocation motion in Si.
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Masuda et al. (1985) studied this question.
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