Hyperbolic metamaterial-based near-field thermophotovoltaic system for hundreds of nanometer vacuum gap

-multilayer-based HMM serves as the emitter at 1000 K and InAs works as the TPV cell at 300 K. By carefully designing the thickness of constituent materials of the HMM emitter, the electric power of the near-field TPV devices can be increased by about 6 times at 100-nm vacuum gap as compared to the case of the plain W emitter. Alternatively, in regards to the electric power generation, HMM emitter at experimentally achievable 100-nm vacuum gap performs equivalently to the plain W emitter at 18-nm vacuum gap. We show that the enhancement mechanism of the HMM emitter is due to the coupled surface plasmon modes at multiple metal-dielectric interfaces inside the HMM emitter. With the minority carrier transport model, the optimal p-n junction depth of the TPV cell has also been determined at various vacuum gaps.