The prototype of an infrared spectroscopic ellipsometer using a Fourier transform PC-based infrared spectrometer is described. Several applications in thin-film characterization are given, particularly in the case of bulk substrate, thick-layered materials, and determination of the dielectric function of layered materials such as silicon oxide and silicon nitride. The sensitivity and possible improvements of this technique are discussed.
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F. Ferrieu (1989) studied this question.
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