Theory of optical interband transitions in strained Si1−yCy grown pseudomorphically on Si (001)

Recently W. Kissinger, M. Weidner, H. J. Osten, and M. Eichler [Appl. Phys. Lett. 65, 3356 (1994)] reported ellipsometry and electroreflectance measurements on the E0, E1, and E2 critical point energies in strained Si1−yCy alloys grown pseudomorphically on Si (001) using molecular-beam epitaxy. We present a theory explaining these energies using established deformation-potential theory and interpret the results and their implications for the band structure of these alloys.