A new peak has been observed 0.4 meV above the direct band-to-band-transition radiation at 1.5202 eV in the 1.4^∘{}K photoluminescence spectrum of high-purity epitaxial GaAs. This new peak is attributed to the recombination of free electrons of nonzero k with free holes in the linear-k valence-band maxima, which are estimated to be {≈}3×{}10⁵ cm^-1 away from and {}1×{}10^-4 eV above the k=0 maximum.
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Gilleo et al. (1969) studied this question.
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