InAs0.91Sb0.09 light emitting diodes (LEDs) were grown on p-type GaSb substrates using liquid phase epitaxy (LPE). These devices exhibit efficient infrared emission at 4.2 µm and can be used to fabricate infrared carbon dioxide (CO2) gas sensors for the cost effective detection and monitoring of CO2 gas in various applications.
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Mao et al. (1996) studied this question.
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